Author： Portavoce A. Volpi F. Ronda A. Gas P. Berbezier I.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.380, Iss.1, 2000-12, pp. : 164-168
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Ge segregation mechanism during Si/Ge multilayer growth
By Sumitomo K. Kobayashi Y. Ito T. Ogino T.
Thin Solid Films, Vol. 357, Iss. 1, 1999-12 ,pp. :
Access to resources
Recommend
Growth of self-assembled homogeneous SiGe-dots on Si(100)
By Schittenhelm P. Abstreiter G. Darhuber A. Bauer G. Werner P. Kosogov A.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Ge-Si intermixing in Ge quantum dots on Si
By Boscherini F. Capellini G. Di Gaspare L. De Seta M. Rosei F. Sgarlata A. Motta N. Mobilio S.
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate
By Tang Y.S. Cai S.J. Jin G.L. Wang K.L. Soyez H.M. Dunn B.S.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :