Author： Tang Y.S. Cai S.J. Jin G.L. Wang K.L. Soyez H.M. Dunn B.S.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.321, Iss.1, 1998-05, pp. : 76-80
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Ion assisted MBE growth of SiGe nanostructures
By Bauer M. Oehme M. Lyutovich K. Kasper E.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :
Access to resources
Recommend
MBE grown Ge dots on Si/SiGe ion implanted buffers
By Gaiduk P.I. Nylandsted Larsen A. Lundsgaard Hansen J.
Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. :
Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots
By Portavoce A. Volpi F. Ronda A. Gas P. Berbezier I.
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :