Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

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Elsevier

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Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization

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High quality, relaxed SiGe epitaxial layers for solar cell application

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Formation of relaxed SiGe films on Si by selective epitaxial growth

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Relaxed SiGe buffers with thicknesses below 0.1 m

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