Carbon and germanium distributions in Si 1-x-y Ge x C y layers epitaxially grown on Si(001) by RTCVD

By Guedj C.   Portier X.   Hairie A.   Bouchier D.   Piriou B.   Calvarin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 129-132

Elsevier

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Optical and electrical properties of Si 1-x-y Ge x C y thin films and devices

By St. Amour A.   Chang C.L.   Lanzerotti L.D.   Sturm J.C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 112-117

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

By Hoyt J.L.   Mitchell T.O.   Rim K.   Singh D.V.   Gibbons J.F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 41-46

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Study of surface roughening of tensily strained Si 1-x-y Ge x C y films grown by ultra high vacuum-chemical vapor deposition

By Calmes C.   Bouchier D.   Debarre D.   Le Thanh V.   Clerc C.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 150-155

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Low-temperature molecular beam epitaxy of Si 1-x-y Ge x C y /Si quantum well structures: electrical and optical properties

By Grutzmacher D.   Hartmann R.   Schnappauf P.   Gennser U.   Muller E.   Bachle D.   Dommann A.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 26-32

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