The effect of post-annealing on the electrical properties of (Pb,Sr)TiO 3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor

Author: Chung H.J.   Chung S.J.   Kim J.H.   Woo S.I.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.394, Iss.1, 2001-08, pp. : 212-217

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Abstract