Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures

By Kleider J.P.   Longeaud C.   Dayoub F.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 208-212

Elsevier

Access to resources Recommend Favorite

Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD

By Han D.   Yue G.   Habuchi H.   Iwaniczko E.   Wang Q.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 134-137

Elsevier

Access to resources Recommend Favorite

Electronic states in hydrogenated microcrystalline silicon

By Finger F.   Muller J.   Malten C.   Wagner H.  

Philosophical Magazine B, Vol. 77, Iss. 3, 1998-03 ,pp. : 805-830

Taylor & Francis Ltd

Access to resources Recommend Favorite

Oxidation processes in hydrogenated amorphous silicon nitride films deposited by ArF laser-induced CVD at low temperatures

By Banerji N.   Serra J.   Gonzalez P.   Chiussi S.   Parada E.   Leon B.   Perez-Amor M.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 214-218

Elsevier

Access to resources Recommend Favorite

Influence of heterogeneities on the electronic properties of hydrogenated amorphous silicon

By Agarwal S.C.  

Philosophical Magazine, Vol. 94, Iss. 15, 2014-05 ,pp. : 1642-1660

Taylor & Francis Ltd

Access to resources Recommend Favorite