Hydrogenated amorphous silicon films prepared at low substrate temperature on a cathode of an asymmetric r.f. plasma CVD system

By Seth T.   Dixit P.N.   Mukherjee C.   Anandan C.   Bhattacharyya R.  

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 11-17

Elsevier

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An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity'

By Mahan A. H.   Beyer W.   Williamson D. L.   Yang J.   Guha S.  

Philosophical Magazine Letters, Vol. 80, Iss. 9, 2000-08 ,pp. : 647-652

Taylor & Francis Ltd

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Hydrogen-induced electronic states and vibrational modes in hydrogenated amorphous silicon nitride

By Lin S.-Y.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 101-104

Elsevier

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Organotin films deposited by laser-induced CVD as active layers in chemical gas sensors

By Larciprete R.   Borsella E.   De Padova P.   Perfetti P.   Faglia G.   Sberveglieri G.  

Thin Solid Films, Vol. 323, Iss. 1, 1998-06 ,pp. : 291-295

Elsevier

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Amorphous hydrogenated carbon nitride films deposited via an expanding thermal plasma at high growth rates

By de Graaf A.   Dinescu G.   Longueville J.L.   van de Sanden M.C.M.   Schram D.C.   Dekempeneer E.H.A.   van Ijzendoorn L.J.  

Thin Solid Films, Vol. 333, Iss. 1, 1998-11 ,pp. : 29-34

Elsevier

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