Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 293-296

Elsevier

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Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces

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Initial stage of SiC film growth on Si(111)7x7 and Si(100)2x1 surfaces using C 60 as a precursor studied by STM and HRTEM

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Segregation and diffusion of impurities from doped Si 1-x Ge x films into silicon

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Atomistic aspects of diffusion and growth on the Si and Ge (111) surfaces

By Kaxiras E.  

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