Author: Kobayashi S. Aoki T. Mikoshiba N. Sakuraba M. Matsuura T. Murota J.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 222-225
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Quest for an optoelectronic material: tetragonal Si x Ge 1-x films
By Bottomley D.J. Delaunay J.-J. Tomita M. Hayashi T.
Thin Solid Films, Vol. 402, Iss. 1, 2002-01 ,pp. :
The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4
By Potapov A.V. Orlov L.K. Ivin S.V.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :
In situ characterization of thin Si 1-x Ge x films on Si(100) by spectroscopic ellipsometry
By Akazawa H.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :