Author： Chassagne T. Ferro G. Chaussende D. Cauwet F. Monteil Y. Bouix J.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.402, Iss.1, 2002-01, pp. : 83-89
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Study of Etching Processes for SiC Defect Analysis
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Access to resources
Recommend
Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Stranski-Krastanov growth of Si on SiC(0001)
By Fissel A. Akhtariev R. Richter W.
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :