Properties of insulated gate field-effect transistors with a polyaniline gate electrode

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Thin Solid Films, Vol. 286, Iss. 1, 1996-09 ,pp. : 252-255

Elsevier

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Optimizing the Thin Film Morphology of Organic Field‐Effect Transistors: The Influence of Molecular Structure and Vacuum Deposition Parameters on Device Performance

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Journal of Macromolecular Science, Part C: Polymer Reviews, Vol. 46, Iss. 1, 2006-01 ,pp. : 79-101

Taylor & Francis Ltd

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Preparation and properties of hydrogen ion-sensitive field effect transistors with sol-gel-derived Mg-modified lead titanate gate

By Jan S.-S.   Chen Y.-C.   Chou J.-C.   Jan P.-J.   Cheng C.-C.  

Journal of Non-Crystalline Solids, Vol. 332, Iss. 1, 2003-12 ,pp. : 11-19

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The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors

By Yeh W.-k.   Lin C.-y.  

Thin Solid Films, Vol. 419, Iss. 1, 2002-11 ,pp. : 218-224

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The influence of the electrodeposition parameters on the morphology of organo-transition metal complexes for thin film gas sensor applications

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Thin Solid Films, Vol. 299, Iss. 1, 1997-05 ,pp. : 18-24

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