The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors

Author： Yeh W.-k.   Lin C.-y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.419, Iss.1, 2002-11, pp. : 218-224

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

By  

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Vol. 43, Iss. 2, 2015-02 ,pp. : 263-276

John Wiley & Sons Inc

Access to resources Recommend Favorite

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

By Ko D.-H.   Lee N.I.   Kim Y.W.   Lee M.Y.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 56-59

Elsevier

Access to resources Recommend Favorite

Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

By Ramgopal Rao V.   Hansch W.   Baumgartner H.   Eisele I.   Sharma D.K.   Vasi J.   Grabolla T.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 37-40

Elsevier

Access to resources Recommend Favorite

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 10, Iss. 9, 2016-09 ,pp. : 703-707

John Wiley & Sons Inc

Access to resources Recommend Favorite

Complementary Metal Oxide Semiconductor Technology With and On Paper

By  

ADVANCED MATERIALS, Vol. 23, Iss. 39, 2011-10 ,pp. : 4491-4496

John Wiley & Sons Inc

Access to resources Recommend Favorite