Control of preferential orientation of AlN films prepared by the reactive sputtering method

By Ishihara M.   Li S.J.   Yumoto H.   Akashi K.   Ide Y.  

Thin Solid Films, Vol. 316, Iss. 1, 1998-03 ,pp. : 152-157

Elsevier

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Influences of bias voltage on the crystallographic orientation of AlN thin films prepared by long-distance magnetron sputtering

By Chu A.K.   Chao C.H.   Lee F.Z.   Huang H.L.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 1-4

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Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputtering

By Lee H.-C.   Lee K.-Y.   Yong Y.-J.   Lee J.-Y.   Kim G.-H.  

Thin Solid Films, Vol. 271, Iss. 1, 1995-12 ,pp. : 50-55

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Effects of nitrogen flow rates on the growth morphology of TiAlN films prepared by an rf-reactive sputtering technique

By Chakrabarti K.   Jeong J.J.   Hwang S.K.   Yoo Y.C.   Lee C.M.  

Thin Solid Films, Vol. 406, Iss. 1, 2002-03 ,pp. : 159-163

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Study of reactive DC magnetron sputtering deposition of AlN thin films

By Dechev D.A.   Dimitrova V.I.   Manova D.I.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 193-197

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