Deep levels in GaN grown by nitridation of GaAs (110) surface in a electron cyclotron-resonance ammonia plasma

Author： Hullavarad S.S.   Bhoraskar S.V.   Sainkar S.R.   Badrinarayanan S.   Mandale A.B.   Ganesan V.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.55, Iss.2, 1999-11, pp. : 121-126

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