![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Kubo S. Kurai S. Taguchi T.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.59, Iss.1, 2000-10, pp. : 277-283
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
GaN substrates for molecular beam epitaxy growth of homoepitaxial structures
Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy
Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)