Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

Author： Lalinsky T.   Skriniarova J.   Kuzmk J.   Hasenohrl S.   Fox A.   Tomaska M.   Mozolova Z.   Kovacik T.   Krajcer A.   Kordos P.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.61, Iss.2, 2001-05, pp. : 323-327

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