RBS and ellipsometric studies of near surface GaAs ion implanted layers

By Kulik M.   Herec J.   Romanek J.  

Vacuum, Vol. 63, Iss. 4, 2001-08 ,pp. : 761-766

Elsevier

Access to resources Recommend Favorite

RBS and optical studies of ion-implanted amorphous silicon carbide layers

By Romanek J.   Kobzev A.P.   Kulik M.   Tsvetkova T.   Zuk J.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 457-465

Elsevier

Access to resources Recommend Favorite

X-Ray studies of Al x GA 1-x As Implanted with 1.5MeV As ions

By Wierzchowski W.   Wieteska K.   Graeff W.   Turos A.   Grotzschel R.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 115-121

Elsevier

Access to resources Recommend Favorite

RBS/channeling studies on the heteroepitaxially grown Y 2 O 3 film on Si(100)

By Whang C.N.   Kim H.B.   Cho M.H.   Whangbo S.W.   Choi S.C.   Choi W.K.   Song J.H.   Kim S.O.  

Thin Solid Films, Vol. 320, Iss. 2, 1998-05 ,pp. : 169-172

Elsevier

Access to resources Recommend Favorite

RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

By Torrisi L.   Gammino S.   Picciotto A.   Wołowski J.   Krasa J.   Laská L.   Calcagnile L.   Quarta G.  

Radiation Effects and Defects in Solids, Vol. 160, Iss. 10-12, 2005-10 ,pp. : 685-695

Taylor & Francis Ltd

Access to resources Recommend Favorite