Optical properties and chemical structure of ion implanted a-SiC:H

Author： Tsvetkova T. Tzenov N. Tzolov M. Dimova-Malinovska D. Adriaenssens G.J. Pattyn H.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.63, Iss.4, 2001-08, pp. : 749-753

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structural and optical properties modification of a-SiC:H by Ga + ion implantation

By Tsvetkova T. Angelov O. Sendova-Vassileva M. Dimova-Malinovska D. Bischoff L. Adriaenssens G.J. Grudzinski W. Zuk J.

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 467-470

Elsevier

Access to resources Recommend Favorite

Optical pattern formation in a-SiC:H films by Ga + ion implantation

By Bischoff L. Teichert J. Kitova S. Tsvetkova T.

Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 73-77

Elsevier

Access to resources Recommend Favorite

Properties of a-SiC:H films deposited in high power regime

By Ambrosone G. Ballarini V. Coscia U. Ferrero S. Giorgis F. Maddalena P. Patelli A. Rava P. Rigato V.

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 279-283

Elsevier

Access to resources Recommend Favorite

Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation

By Demichelis F. Crovini G. Pirri C. Tresso E. Galloni R. Summonte C. Rizzoli R. Zignani F. Rava P.

Thin Solid Films, Vol. 265, Iss. 1, 1995-09 ,pp. : 113-118

Elsevier

Access to resources Recommend Favorite

Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD

By Lee Y.H. Kim D.S.

Thin Solid Films, Vol. 283, Iss. 1, 1996-09 ,pp. : 109-118

Elsevier

Access to resources Recommend Favorite