Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO 2 /pure Ge/rapid thermal oxide memory structure

Author: Heng C.L.   Teo L.W.   Ho V.   Tay M.S.   Lei Y.   Choi W.K.   Chim W.K.  

Publisher: Elsevier

ISSN: 0167-9317

Source: Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 218-223

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