Irradiation induced defects in Si 1-x Ge x : The effect of alloying

By Mesli A.   Nylandsted Larsen A.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 211, Iss. 1, 2003-09 ,pp. : 80-90

Elsevier

Access to resources Recommend Favorite

Studies on the nitrogen ion irradiation induced defects in n-GaAs by deep level transient spectroscopy

By Jayavel P.   Santhakumar K.   Asokan K.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 496-500

Elsevier

Access to resources Recommend Favorite

Damage and substitution anomalies for MeV Sb implantation in Si(100) after high-energy irradiation

By Dey S.   Varma S.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 146-150

Elsevier

Access to resources Recommend Favorite

Effect of N + ion implantation on n-GaN

By Santhakumar K.   Nair K.G.M.   Kesavamoorthy R.   Ravichandran V.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 381-385

Elsevier

Access to resources Recommend Favorite

Computer simulation of ion channeling in Si containing structurally relaxed point defects

By Lulli G.   Albertazzi E.   Bianconi M.   Balboni S.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 211, Iss. 1, 2003-09 ,pp. : 50-54

Elsevier

Access to resources Recommend Favorite