Studies on the nitrogen ion irradiation induced defects in n-GaAs by deep level transient spectroscopy

By Jayavel P.   Santhakumar K.   Asokan K.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 496-500

Elsevier

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Effect of N + ion implantation on n-GaN

By Santhakumar K.   Nair K.G.M.   Kesavamoorthy R.   Ravichandran V.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 381-385

Elsevier

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Bombardment-induced ripple topography on GaAs and InP

By Malherbe J.B.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 258-263

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Diagnostics of ablation process induced by pulsed ion beam

By Watanabe M.   Okayama H.   Funatsu M.   Kasuya K.  

Fusion Engineering and Design, Vol. 44, Iss. 1, 1999-02 ,pp. : 267-270

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Ion beam modification of CR-39 (DOP) and polyamide nylon-6 polymers

By Kumar R.   Prasad R.   Vijay Y.K.   Acharya N.K.   Verma K.C.   De U.  

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212, Iss. unknown, 2003-12 ,pp. : 221-227

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