Current Conduction and Dielectric Behavior of High k-Y 2 O 3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

Author： Rastogi A.   Desu S.  

Publisher： Springer Publishing Company

ISSN： 1385-3449

Source： Journal of Electroceramics, Vol.13, Iss.1-3, 2004-07, pp. : 121-127

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