Electrical properties of ultrathin HfO 2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures

By Mahapatra R.   Maikap S.   Ray S.  

Journal of Electroceramics, Vol. 16, Iss. 4, 2006-07 ,pp. : 545-548

Springer Publishing Company

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Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a conventional rf magnetron sputtering

By Lee Byung-Teak   Jeong Sang-Hun   Kim Myong-Ho   Kuk Min-Ho   Bae Dong-Sik   Song Tae-Kwon   Kim Won-Jeong  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 305-310

Springer Publishing Company

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Growth mode in strained ZnO films on Al 2 O 3 (0001) during sputtering

By Kim I.   Kim H.   Doh S.   Je J.   Cho T.  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 327-330

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Fabrication of amorphous bulk and multi-phase ceramics by melting method in the HfO 2 -Al 2 O 3 -Gd 2 O 3 -Eu 2 O 3 system

By Sugiyama Aoi  

Journal of Electroceramics, Vol. 17, Iss. 1, 2006-09 ,pp. : 71-74

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Cracking of low temperature solution deposited CeO 2 thin films

By Goh Gregory   Tay Christine   Chan Kelvin   Gosvami N.  

Journal of Electroceramics, Vol. 16, Iss. 4, 2006-07 ,pp. : 575-579

Springer Publishing Company

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