Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy

By Byeun Yun-ki   Han Kyong-Sop   Choi Sung-Churl  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 903-907

Springer Publishing Company

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Morphology of porous n -GaP anodically formed in different mineral acids

By Wloka J.   Schmuki P.  

Journal of Electroceramics, Vol. 16, Iss. 1, 2006-02 ,pp. : 23-28

Springer Publishing Company

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A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface

By Ertler C.   Schürrer F.  

Journal of Computational Electronics, Vol. 5, Iss. 1, 2006-03 ,pp. : 15-26

Springer Publishing Company

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Doping level-dependent dry-etch damage in n -type GaN

By Lee Ji-Myon   Kim Byung-Il   Park Seong-Ju  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 227-230

Springer Publishing Company

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Is self-heating responsible for the current collapse in GaN HEMTs?

By Padmanabhan Balaji  

Journal of Computational Electronics, Vol. 11, Iss. 1, 2012-03 ,pp. : 129-136

Springer Publishing Company

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