Is self-heating responsible for the current collapse in GaN HEMTs?

By Padmanabhan Balaji  

Journal of Computational Electronics, Vol. 11, Iss. 1, 2012-03 ,pp. : 129-136

Springer Publishing Company

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Various one-dimensional GaN nanostructures formed by non-catalytic routes

By Choi Heon-Jin   Kim Dae-Hee   Kim Tae-Geun   Lee Jung-Chul   Sung Yun-Mo  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 221-225

Springer Publishing Company

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Influence of Growth Temperature on Surface Morphologies of GaN Crystals Grown on Dot-Patterned Substrate by Hydride Vapor Phase Epitaxy

By Liu Hai-Ping  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 839-846

Springer Publishing Company

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Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy

By Byeun Yun-ki   Han Kyong-Sop   Choi Sung-Churl  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 903-907

Springer Publishing Company

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Characterization of GaN/(4H)SiC Heterostructure Vertical pn Power Diode

By Bose Srikanta   Mazumder S.K.  

Journal of Low Power Electronics, Vol. 9, Iss. 1, 2013-04 ,pp. : 89-96

American Scientific Publishers

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