Effect of rapid thermal annealing on InP_1−xBi_x grown by molecular beam epitaxy

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Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94014-94017

IOP Publishing

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Electrical properties of InAlAs/InAs x P 1-x /InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy

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Journal of Electronic Materials, Vol. 29, Iss. 2, 2000-02 ,pp. : 215-221

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Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

By Ren Y.   Micovic M.   Cai W.   Mohney S.   Lord S.   Miller D.   Mayer T.  

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Super-flat interfaces in In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

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The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy

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