The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Author： Jones K.   Chen J.   Bharatan S.   Jackson J.   Rubin L.   Puga-Lambers M.   Venables D.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.26, Iss.11, 1997-11, pp. : 1361-1364

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