Acceptor and donor doping of Al x Ga 1−x N thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

By Davis R.   Bremser M.   Perry W.   Nam O.   Griffis D.   Loesing R.   Ricks D.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 229-232

Springer Publishing Company

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Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

By Perry William   Zheleva T.   Bremser M.   Davis R.   Shan W.   Song J.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 224-231

Springer Publishing Company

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MOCVD growth of GaBN on 6H-SiC (0001) substrates

By Wei C.   Xie Z.   Edgar J.   Zeng K.   Lin J.   Jiang H.   Chaudhuri J.   Ignatiev C.   Braski D.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 452-456

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

Springer Publishing Company

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Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

By Xie Z.   Wei C.   Chen S.   Jiang S.   Edgar J.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 411-417

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