Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling

By Muthuvenkatraman S.   Gorantla Suresh   Venkat Rama   Dorsey Donald  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 472-478

Springer Publishing Company

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Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

By Marko I P   Jin S R   Hild K   Batool Z   Bushell Z L   Ludewig P   Stolz W   Volz K   Butkutė R   Pačebutas V   Geizutis A   Krotkus A   Sweeney S J  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94008-94017

IOP Publishing

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Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

By Nakadaira Atsushi   Tanaka Hidenao  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 320-324

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Impurity incorporation and the surface morphology of MOVPE grown GaAs

By Li Jiang   Kuech T.  

Journal of Electronic Materials, Vol. 28, Iss. 2, 1999-02 ,pp. : 124-133

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MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

By Wu Owen   Rajavel Rajesh   Lyon Terry   Jensen John   Jack Mike   Kosai Ken   Chapman George   Sen Sanghamitra   Baumgratz Bonnie   Walker Bobby   Johnson Bill  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 488-492

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