Acceptor and donor doping of Al x Ga 1−x N thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

By Davis R.   Bremser M.   Perry W.   Nam O.   Griffis D.   Loesing R.   Ricks D.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 229-232

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

By Rendakova S.   Nikitina I.   Tregubova A.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 292-295

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

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Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

By Hanser A.   Wolden C.   Perry W.   Zheleva T.   Carlson E.   Banks A.   Therrien R.   Davis R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 238-245

Springer Publishing Company

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