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By Jönen H   Bremers H   Rossow U   Langer T   Kruse A   Hoffmann L   Thalmair J   Zweck J   Schwaiger S   Scholz F   Hangleiter A  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24013-24020

IOP Publishing

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X-ray diffraction studies of Al x Ga 1-x N (0= x =1) ternary alloys grown on sapphire substrate

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Microelectronics International, Vol. 28, Iss. 2, 2011-05 ,pp. : 44-48

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A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection

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Russian Microelectronics, Vol. 33, Iss. 1, 2004-01 ,pp. : 27-32

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Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

By Wang X   Chauvat M P   Ruterana P   Walther T  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114011-114016

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Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

By Hönnicke M.  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 727-731

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