Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

Springer Publishing Company

Access to resources Recommend Favorite

Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy

By Katkov A V   Chi Jim   Wang C C   Cheng C  

Semiconductor Science and Technology, Vol. 26, Iss. 2, 2011-02 ,pp. : 22001-22004

IOP Publishing

Access to resources Recommend Favorite

Characterization of AlGaN/GaN Structures on Various Substrates Grown by Radio Frequency-Plasma Assisted Molecular Beam Epitaxy

By Kang Sangbeom   Doolittle W. Alan   Lee K. K.   Dai Z.R.   Wang Z.L.   Stock Stuart R.   Brown April S.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 156-161

Springer Publishing Company

Access to resources Recommend Favorite

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

By Han M.   Kang T.   Leem J.   Song B.   Hou Y.   Baek W.   Lee M.   Bahng J.   Kim K.   Kim J.   Kim H.   Kim T.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 507-510

Springer Publishing Company

Access to resources Recommend Favorite

Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

By Romano L.   Krusor B.   Singh R.   Moustakas T.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 285-289

Springer Publishing Company

Access to resources Recommend Favorite