Gas source molecular beam epitaxy growth of SrS:Ce for flat panel displays

Author： Tong W. Yang T. Park W. Chaichimansour M. Schön S. Wagner B. Summers C.

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.26, Iss.6, 1997-06, pp. : 728-731

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125001-125006

IOP Publishing

Access to resources Recommend Favorite

In situ control of gan growth by molecular beam epitaxy

By Held R. Crawford D. Johnston A. Dabiran A. Cohen P.

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 272-280

Springer Publishing Company

Access to resources Recommend Favorite

Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si 1−x Ge x for MOS applications

By Bera L. Ray S. Nayak D. Usami N. Shiraki Y. Maiti C.

Journal of Electronic Materials, Vol. 28, Iss. 2, 1999-02 ,pp. : 98-104

Springer Publishing Company

Access to resources Recommend Favorite

Sputter deposition of phosphors for electroluminescent flat panel displays

By Davidson Mark Pathangey Balu Holloway Paul Rack Philip Sun S. King C.

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1355-1360

Springer Publishing Company

Access to resources Recommend Favorite

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

By Mackenzie J. Abbaschian L. Abernathy C. Donovan S. Pearton S. Chow P. Hove J.

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1266-1269

Springer Publishing Company

Access to resources Recommend Favorite