Characteristics of Si 3 N 4 /GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al 0.3 Ga 0.7 As interlayers

Author: Park Dae-Gyu   Chen Zhi   Morkoç Hadis  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.26, Iss.9, 1997-09, pp. : 1076-1082

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Abstract