HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

By Almeida L.   Dhar N.   Martinka M.   Dinan J.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 754-759

Springer Publishing Company

Access to resources Recommend Favorite

Plastic Flow and Dislocation Compensation in ZnS y Se 1−y /GaAs (001) Heterostructures

By Kujofsa T.  

Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. : 2993-3000

Springer Publishing Company

Access to resources Recommend Favorite

Surface treatment of znse substrate and homoepitaxy of znse

By Cho M.   Koh K.   Morikawa K.   Arai K.   Jung H.   Zhu Z.   Yao T.   Okada Y.  

Journal of Electronic Materials, Vol. 26, Iss. 5, 1997-05 ,pp. : 423-428

Springer Publishing Company

Access to resources Recommend Favorite

Growth and properties of GaAs nanowires on fused quartz substrate

By Yufeng Zhao   Xinhua Li   Wenbo Wang   Bukang Zhou   Huahua Duan   Tongfei Shi   Xuesong Zeng   Ning Li   Yuqi Wang  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 93002-93007

IOP Publishing

Access to resources Recommend Favorite

Pseudomorphic HEMT with Sn nanowires on a vicinal GaAs substrate

By KhabibullinR A   YachmenevA E   LavrukhinD V   PonomarevD S   BugayevA S   MaltsevP P  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85009-85013

IOP Publishing

Access to resources Recommend Favorite