Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

By Hanser A.   Wolden C.   Perry W.   Zheleva T.   Carlson E.   Banks A.   Therrien R.   Davis R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 238-245

Springer Publishing Company

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

Springer Publishing Company

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Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy

By Nordell N.   Schöner A.   Linnarsson M.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 187-192

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

Springer Publishing Company

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Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

By Xie Z.   Wei C.   Chen S.   Jiang S.   Edgar J.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 411-417

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