Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

By Bae In-Tae   Seong Tae-Yeon   Park Young   Kim Eun  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 873-877

Springer Publishing Company

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Lateral epitaxial overgrowth of GaN films on SiO 2 areas via metalorganic vapor phase epitaxy

By Nam Ok-Hyun   Zheleva Tsvetanka   Bremser Michael   Davis Robert  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 233-237

Springer Publishing Company

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Impurity Band in the Interfacial Region of GaN Films Grown by Hydride Vapor Phase Epitaxy

By Hsu J.W.P.   Lang D.V.   Richter S.   Kleiman R.N.   Sergent A.M.   Look D.C.   Molnar R.J.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 115-122

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

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Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 23-26

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