Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS

Author： Docter D.   Ibbetson J.   Gao Y.   Mishra U.   Liu T.   Grider D.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.27, Iss.5, 1998-05, pp. : 479-483

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Epi-n-ZnO/<100> Si, GaAs and InP by L-MBE: a novel approach for III-V devices

By Ramamoorthy K.   Sanjeeviraja C.   Jayachandran M.   Sankaranarayanan K.   Misra P.   Kukreja L.M.  

Materials Science in Semiconductor Processing, Vol. 6, Iss. 4, 2003-08 ,pp. : 219-224

Elsevier

Access to resources Recommend Favorite

Si takes SiGe, GaAs & InP into its roadmap

By Purvis G.  

III-Vs Review, Vol. 16, Iss. 6, 2003-08 ,pp. : 2-2

Elsevier

Access to resources Recommend Favorite

DIRECT GROWTH OF HIGH-QUALITY InP LAYERS ON GaAs SUBSTRATES BY MOCVD

By YARN K. F.  

Active and Passive Electronic Components, Vol. 26, Iss. 2, 2003-06 ,pp. : 71-79

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

By Ren Y.   Micovic M.   Cai W.   Mohney S.   Lord S.   Miller D.   Mayer T.  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 887-893

Springer Publishing Company

Access to resources Recommend Favorite

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 12001-12005

IOP Publishing

Access to resources Recommend Favorite