Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

By Ofuonye Benedict   Lee Jaseun   Yan Minjun   Sun Changwoo   Zuo Jian-Min   Adesida Ilesanmi  

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95005-95014

IOP Publishing

Access to resources Recommend Favorite

Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

By Grym J.   Yatskiv R.  

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 55009-55012

IOP Publishing

Access to resources Recommend Favorite

A Transmission Electron Microscopy Study of Microstructure Evolution with Increasing Anneal Temperature in Ti/Al Ohmic Contacts to n-GaN

By Bright A.N.   Tricker D.M.   Humphreys C.J.   Davies R.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 283-286

Springer Publishing Company

Access to resources Recommend Favorite

Electrical and Optical Characterization of Ni/Al 0.3 Ga 0.7 N/GaN Schottky Barrier Diodes

By Kordoš P.  

Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. : 3017-3020

Springer Publishing Company

Access to resources Recommend Favorite

Thermally Stable Nb and Nb/Au Ohmic Contacts to p-GaN

By Kim Han-Ki   Seong Tae-Yeon   Lee Cheul-Ro  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 266-270

Springer Publishing Company

Access to resources Recommend Favorite