Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

By Luther B.   Mohney S.   Delucca J.   Karlicek R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 196-199

Springer Publishing Company

Access to resources Recommend Favorite

Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer

By LeeJae-Gil   KimHyun-Seop   KimDong-Hwan   HanSang-Woo   SeoKwang-Seok   ChaHo-Young  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85005-85011

IOP Publishing

Access to resources Recommend Favorite

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

By Kocan M.   Umana-Membreno G.A.   Chung J.S.   Recht F.   McCarthy L.   Keller S.   Mishra U.K.   Parish G.   Nener B.D.  

Journal of Electronic Materials, Vol. 36, Iss. 9, 2007-09 ,pp. : 1156-1159

Springer Publishing Company

Access to resources Recommend Favorite

Ohmic contacts to n-type GaN

By Miller Stephen   Holloway Paul  

Journal of Electronic Materials, Vol. 25, Iss. 11, 1996-11 ,pp. : 1709-1714

Springer Publishing Company

Access to resources Recommend Favorite

Photoreflectance study of Au-schottky contacts on n-GaN

By Liu Wei   Li Ming-Fu   Chua Soo-Jin   Akutsu Nakao   Matsumoto Koh  

Journal of Electronic Materials, Vol. 28, Iss. 4, 1999-04 ,pp. : 360-363

Springer Publishing Company

Access to resources Recommend Favorite