Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

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MOCVD growth of GaBN on 6H-SiC (0001) substrates

By Wei C.   Xie Z.   Edgar J.   Zeng K.   Lin J.   Jiang H.   Chaudhuri J.   Ignatiev C.   Braski D.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 452-456

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Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

By Perry William   Zheleva T.   Bremser M.   Davis R.   Shan W.   Song J.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 224-231

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Acceptor and donor doping of Al x Ga 1−x N thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

By Davis R.   Bremser M.   Perry W.   Nam O.   Griffis D.   Loesing R.   Ricks D.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 229-232

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

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