Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped Cd x Hg 1−x Te

Author： Haakenaasen R.   Colin T.   Steen H.   Trosdahl-Iversen L.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.29, Iss.6, 2000-06, pp. : 849-852

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