Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

Author: Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 162-169

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