Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe

By Canedy C.L.   Aifer E.H.   Vurgaftman I.   Tischler J.G.   Meyer J.R.   Warner J.H.   Jackson E.M.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 852-856

Springer Publishing Company

Access to resources Recommend Favorite

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

By Rhiger David  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1815-1822

Springer Publishing Company

Access to resources Recommend Favorite

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n − / p Ion Implantation Technology

By Gravrand O.   Borniol E.   Bisotto S.   Mollard L.   Destefanis G.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 981-987

Springer Publishing Company

Access to resources Recommend Favorite

Behavior of p-type dopants in HgCdTe

By Berding M.   Sher A.   Schilfgaarde M.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 625-628

Springer Publishing Company

Access to resources Recommend Favorite

MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays

By Mitra P.   Barnes S.   Case F.   Reine M.   O’Dette P.   Starr R.   Hairston A.   Kühler K.   Weiler M.   Musicant B.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 482-487

Springer Publishing Company

Access to resources Recommend Favorite