Author： Deguchi Masashi
Publisher： Springer Publishing Company
ISSN： 1543-186X
Source： Journal of Electronic Materials, Vol.39, Iss.6, 2010-06, pp. : 815-818
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Abstract
Electron holography was used to determine the piezoelectric fields across an InGaN/GaN quantum-well structure. Holograms were taken with the sample intentionally tilted such that adjacent layers overlapped. The phase changes in the overlapping regions were analyzed to determine the piezoelectric fields in each well. It was shown that the piezoelectric field was strongest at the central part of the quantum-well structure. The field strength averaged over eight InGaN wells was ~2.2 MV/cm.
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