The Effect of Built-in Electric Field in GaN/AlGaN Quantum Wells with High AlN Mole Fraction

Author: Ng H.M.   Harel R.   Chu S.N.G.   Cho A.Y.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 134-137

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