Analysis of iodine incorporation in mbe grown CdTe and HgCdTe

By Parikh A.   Pearson S.D.   Wagner B.K.   Summers C.J.  

Journal of Electronic Materials, Vol. 26, Iss. 9, 1997-09 ,pp. : 1065-1069

Springer Publishing Company

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Mode of arsenic incorporation in HgCdTe grown by MBE

By Sivananthan S.   Wijewarnasuriya P.   Aqariden F.   Vydyanath H.   Zandian M.   Edwall D.   Arias J.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 621-624

Springer Publishing Company

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Inter-layer subb and mixing in MBE-grown HgTe/CdTe superlattices

By Park J.   Lee Jaesun   Moon Y.   Choi J.   Hahn M.   Song B.   Hou Y.   Kang T.   Yoo Kyung-Hwa   Hoffman C.   Meyer J.   Jeoung Y.   Kim H.   Kim J.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 584-587

Springer Publishing Company

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MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

By Wu Owen   Rajavel Rajesh   Lyon Terry   Jensen John   Jack Mike   Kosai Ken   Chapman George   Sen Sanghamitra   Baumgratz Bonnie   Walker Bobby   Johnson Bill  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 488-492

Springer Publishing Company

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VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications

By D’souza A.   Dawson L.   Anderson E.   Markum A.   Tennant W.   Bubulac L.   Zandian M.   Pasko J.   McLevige W.   Edwall D.   Derr J.   Jandik J.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 656-661

Springer Publishing Company

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