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Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 93001-93005

IOP Publishing

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The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

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International Journal of Electronics, Vol. 98, Iss. 6, 2011-06 ,pp. : 699-712

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Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor

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Thermoelectric Behavior of Sb- and Al-Doped n -Type Mg 2 Si Device Under Large Temperature Differences

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Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 629-634

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Temperature-Dependent Studies of Si-Implanted Al 0.33 Ga 0.67 N with Different Annealing Temperatures and Times

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