

Author: Ozdemir Selahattin
Publisher: Taylor & Francis Ltd
ISSN: 1362-3060
Source: International Journal of Electronics, Vol.98, Iss.6, 2011-06, pp. : 699-712
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Metal-insulator-semiconductor Schottky diodes were fabricated to investigate the tunnel effect and the dominant carrier transport mechanism by using current density-voltage (J-V) and capacitance-voltage (C-V) measurements in the temperature range of 295-370 K. The slope of the ln J-V curves was almost constant value over the nearly four decades of current and the forward bias current density J is found to be proportional to Jo (T) exp(AV). The values of Nss estimated from J-V and C-V measurements decreased with increasing temperature. The temperature dependence of the barrier heights obtained from forward bias J-V was found to be entirely different than that from the reverse bias C-V characteristics. All these behaviours confirmed that the prepared samples have a tunnel effect and the current transport mechanism in the temperature range of 295-370 K was predominated by a trap-assisted multi-step tunnelling, although the Si wafer has low doping concentration and the measurements were made at moderate temperature.
Related content







