Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO 2 and Lattice-Matched II–VI Tunnel Insulator

Author: Gogna M.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.40, Iss.8, 2011-08, pp. : 1769-1774

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Abstract